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HGAAM 16253P4 BZV79C36 144854 BZV79C36 01VXC CSB737R B39162
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  p a g e 1 r e v : b c o m c h i p t e c h n o l o g y c o . , l t d . q w - j p 0 2 7 mechanical data symbol t yp parameter min max unit junction capacitance conditions breakdown voltage v br v i r = 1ma f o r w a r d v o l t a g e v f v c t pf v r = 0v , f=1m hz 5.7 35 1.2 i f = 1 0 m a clamping voltage v storage temperature operation temperature 125 c t stg t op c 150 -55 v c i pp = 1a,tp=8/20us i pp = 6.5a,tp=8/20us 7 . 5 10.6 reverse stand-off voltage v r wm v 3.3 6.2 6.7 leakage current i l ua 0.1 v r = 3.3v -40 v maximum rating and electrical characteristics (at t a=25c unless otherwise noted) peak pulse power 70 w p pp CPDZ3V3U-HF features - uni-directional esd protection. - surface mount package. - ultra small smd package:0201 - high component density . rohs device halogen free smd esd protection diode - case: 0201/dfn0603 package, molded plastic. - t erminals: gold plated, solderable per mil-std-750, method 2026. 0 2 0 1 / d f n 0 6 0 3 0 . 0 2 6 ( 0 . 6 7 0 ) 0 . 0 2 2 ( 0 . 5 7 0 ) 0 . 0 1 5 ( 0 . 3 7 0 ) 0 . 0 1 1 ( 0 . 2 7 0 ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) 0 . 0 1 3 ( 0 . 3 3 5 ) 0 . 0 1 0 ( 0 . 2 6 5 ) 0 . 0 1 2 ( 0 . 2 8 5 ) 0 . 0 0 4 ( 0 . 1 0 5 ) 0 . 0 11 ( 0 . 2 8 5 ) 0 . 0 0 8 ( 0 . 2 1 5 ) 0 . 0 0 7 ( 0 . 1 7 5 ) 0 . 0 0 8 ( 0 . 2 1 5 ) - low clamping voltage. - low leakage. t p =8/20us esd capability kv esd iec 61000-4-2(air) iec 61000-4-2(contact) 3 0 30 kv circuit diagram c o m p a n y r e s e r v e s t h e r i g h t t o i m p r o v e p r o d u c t d e s i g n , f u n c t i o n s a n d r e l i a b i l i t y w i t h o u t n o t i c e . - mounting position: any - polarity: color band denotes cathode end.
smd esd protection diode p a g e 2 r e v : b c o m c h i p t e c h n o l o g y c o . , l t d . q w - j p 0 2 7 ra ting and characteristic cur ves (CPDZ3V3U-HF) 20.0 25.0 30.0 0 1 2 4 3 c a p a c i t a n c e b e t w e e n t e r m i n a l s , ( p f ) reverse v oltage, (v) f i g . 5 - c a p a c i t a n c e b e t w e e n t e r m i n a ls c h a r a c t e r is t i c s c l a m p i n g v o l t a g e , v c ( v ) f i g . 3 - c l a m p i n g v o l t a g e v s . p e a k p u l s e c u r r e n t peak pulse current, i pp (a) p o w e r r a t i n g , ( % ) ambient t emperature, ( c ) 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 2 5 5 0 7 5 1 0 0 1 5 0 0 1 2 5 f ig .2 - p o w e r r a ti n g d e r a ti n g c u r v e 7.0 7.0 8.0 9.0 10.0 4.0 3.0 2.0 1.0 5.0 6.0 35.0 1 1.0 8 / 2 0 u s w a v e f o r m m o u n t i n g o n g l a s s e p o x y p c b s 0 1 3 0 . 0 0 1 1 . 0 0 5 r e v e r s e c u r r e n t , ( u a ) r e v e r s e vo l t a g e , ( v ) f i g . 4 - r e v e r s e c h a r a c t e r i s t i c s 0 . 0 1 0 . 1 0 2 4 f = 1 m h z ta = 2 5 c f = 1 m h z ta = 2 5 c 1 5 0 c 1 2 5 c 1 0 0 c 5 0 c 7 5 c 2 5 c t i m e , ( u s ) 0 % 2 0 % 4 0 % 6 0 % 8 0 % 1 0 0 % 0 5 1 5 2 5 3 0 1 0 2 0 1 2 0 % p e r c e n t a g e o f i p p t a = 2 5 c p e a k v a l u r i p p t e s t w a v e f o r m p a r a m e t e r s t f = 8 u s t d = 2 0 u s e - t t d = t i p p / 2 f ig .1 - 8 /2 0 u s p e a k p u ls e c u r r e n t w a v e fo r m a c c . ie c 6 1 0 0 - 4 - 5 c o m p a n y r e s e r v e s t h e r i g h t t o i m p r o v e p r o d u c t d e s i g n , f u n c t i o n s a n d r e l i a b i l i t y w i t h o u t n o t i c e .
p a g e 3 r e v : b c o m c h i p t e c h n o l o g y c o . , l t d . q w - j p 0 2 7 smd esd protection diode b c d d d 2 d 1 s y m b o l a ( m m ) ( i n c h ) 0 . 0 1 5 + 0 . 0 0 1 / 0 . 0 0 1 0 . 0 2 8 0 . 0 0 1 0 . 0 1 4 0 . 0 0 1 0 . 0 5 9 + 0 . 0 0 4 7 . 0 0 8 0 . 0 3 9 2 . 1 4 2 0 . 0 1 6 0 . 5 1 2 0 . 0 0 8 0 . 3 9 + 0 . 0 3 / - 0 . 0 2 0 . 7 2 0 . 0 3 1 . 5 0 + 0 . 1 0 5 4 . 4 0 . 4 0 1 3 . 0 0 . 2 0 0 . 3 6 0 . 0 3 1 7 8 1 . 0 0 0 2 0 1 ( d f n 0 6 0 3 ) o 1 2 0 t r a i l e r d e v i c e l e a d e r 1 0 p i t c h e s ( m i n ) 1 0 p i t c h e s ( m i n ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e n d s t a r t d 1 d 2 d w 1 d i r e c t i o n o f f e e d r e e l t a p i n g s p e c i f i c a t i o n e f p p 0 p 1 t w w 1 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 0 7 9 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 0 0 9 0 . 0 0 2 0 . 3 1 5 0 . 0 0 8 0 . 4 8 4 0 . 0 0 4 2 . 0 0 0 . 0 5 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 4 . 0 0 0 . 0 5 2 . 0 0 0 . 0 5 0 . 2 3 0 . 0 5 8 . 0 0 0 . 1 0 1 2 . 3 0 0 . 1 0 0 2 0 1 ( d f n 0 6 0 3 ) t c d e p 0 p 1 f w a b p c o m p a n y r e s e r v e s t h e r i g h t t o i m p r o v e p r o d u c t d e s i g n , f u n c t i o n s a n d r e l i a b i l i t y w i t h o u t n o t i c e .
c part number marking code CPDZ3V3U-HF s u g g e s t e d p a d l a y o u t m a r k i n g c o d e c o m c h i p s m d d i o d e s p e c i a l i s t page 4 qw -jp027 rev : b smd esd protection diode c size (inch) 0.122 (mm) 0.310 0.200 0.350 0.079 0.014 0.150 0.006 e 0.365 0.014 b c d a 0 2 0 1 ( d f n 0 6 0 3 ) e b c d a standard packaging case t ype qty per reel (pcs) 8,000 0201(dfn0603) reel size (inch) 7 c o m p a n y r e s e r v e s t h e r i g h t t o i m p r o v e p r o d u c t d e s i g n , f u n c t i o n s a n d r e l i a b i l i t y w i t h o u t n o t i c e .


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